Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications
نویسندگان
چکیده
PECVD technology was used for deposition of a-SiC:H films at different temperature from SiH4 and CH4 gas mixture. A P-type silicon wafer with resistivity 2-7 cm and (100) orientation was used as the substrate for the growth of SiC films. Irradiation of samples by fast neutrons with fluence 1.4x10 14 cm -2 was used. Raman band feature intensity decreasing after neutron irradiation. The measured currents after irradiation are greater (up to 100 times) than the current before irradiation for all samples.
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